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CCD Image Sensors in Deep-Ultraviolet [electronic resource] :Degradation Behavior and Damage Mechanisms / by Flora M. Li, Arokia Nathan.

by Li, Flora M [author.]; Nathan, Arokia [author.]; SpringerLink (Online service).
Material type: materialTypeLabelBookSeries: Microtechnology and Mems: Publisher: Berlin, Heidelberg : Springer Berlin Heidelberg, 2005.Description: XI, 231 p. 84 illus. online resource.ISBN: 9783540274124.Subject(s): Chemistry | Spectrum analysis | Electronics | Optical materials | Chemistry | Optical and Electronic Materials | Optical Spectroscopy, Ultrafast Optics | Physics and Applied Physics in Engineering | Electronics and Microelectronics, InstrumentationOnline resources: Click here to access online
Contents:
Overview of CCD -- CCD Imaging in the Ultraviolet (UV) Regime -- Silicon -- Silicon Dioxide -- Si-SiO2 Interface -- General Effects of Radiation -- Effects of Radiation on CCDs -- UV-Induced Effects in Si -- UV Laser Induced Effects in SiO2 -- UV Laser Induced Effects at the Si-SiO2 Interface -- CCD Measurements at 157nm -- Design Optimizations for Future Research -- Concluding Remarks.
In: Springer eBooksSummary: As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths.
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Overview of CCD -- CCD Imaging in the Ultraviolet (UV) Regime -- Silicon -- Silicon Dioxide -- Si-SiO2 Interface -- General Effects of Radiation -- Effects of Radiation on CCDs -- UV-Induced Effects in Si -- UV Laser Induced Effects in SiO2 -- UV Laser Induced Effects at the Si-SiO2 Interface -- CCD Measurements at 157nm -- Design Optimizations for Future Research -- Concluding Remarks.

As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths.

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