Rare-Earth Implanted MOS Devices for Silicon Photonics [electronic resource] :Microstructural, Electrical and Optoelectronic Properties / by Lars Rebohle, Wolfgang Skorupa.
by Rebohle, Lars [author.]; Skorupa, Wolfgang [author.]; SpringerLink (Online service).
Material type:
Item type | Current location | Call number | Status | Date due | Barcode |
---|---|---|---|---|---|
MAIN LIBRARY | TA1750-1750.22 (Browse shelf) | Available |
Browsing MAIN LIBRARY Shelves Close shelf browser
QA71-90 Parallel Computational Fluid Dynamics 2008 | QA440-699 Geometry | QA164-167.2 An Irregular Mind | TA1750-1750.22 Rare-Earth Implanted MOS Devices for Silicon Photonics | QA75.5-76.95 Web Services and Formal Methods | QA8.9-QA10.3 Transactions on Rough Sets XII | TK5105.5-5105.9 Recent Trends in Network Security and Applications |
Silicon-Based Light Emission -- Microstructure -- Electrical Properties -- Electroluminescence Spectra -- Electroluminescence Efficiency -- Stability and Degradation -- Applications.
The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general.
There are no comments for this item.