GaN-Based Laser Diodes [electronic resource] :Towards Longer Wavelengths and Short Pulses / by Wolfgang G. Scheibenzuber.
by Scheibenzuber, Wolfgang G [author.]; SpringerLink (Online service).
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Long Loan | MAIN LIBRARY | TA1671-1707 (Browse shelf) | Available |
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QC1-999 3+1 Formalism in General Relativity | QC19.2-20.85 Semiclassical Approach to Mesoscopic Systems | R895-920 Radiation Dose from Multidetector CT | TA1671-1707 GaN-Based Laser Diodes | NA9000-9428 Complexity Theories of Cities Have Come of Age | TK5105.5-5105.9 Economics of Converged, Internet-Based Networks | TK5105.5-5105.9 Stabilization, Safety, and Security of Distributed Systems |
Basic Concepts -- Thermal Properties -- Light Propagation and Amplification in Laser Diodes from Violet to Green -- Semipolar Crystal Orientations for Green Laser Diodes -- Dynamics of Charge Carriers and Photons -- Short-Pulse Laser Diodes.
The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.
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