Strain-Induced Effects in Advanced MOSFETs [electronic resource] /by Viktor Sverdlov.
by Sverdlov, Viktor [author.]; SpringerLink (Online service).
Material type:
BookSeries: Computational Microelectronics: Publisher: Vienna : Springer Vienna : 2011.Description: XIV, 252p. 101 illus. online resource.ISBN: 9783709103821.Subject(s): Engineering | Electronics | Engineering | Electronics and Microelectronics, InstrumentationDDC classification: 621.381 Online resources: Click here to access online
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Springer eBooksSummary: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given
| Item type | Current location | Call number | Status | Date due | Barcode |
|---|---|---|---|---|---|
| TK7874-7874.9 (Browse shelf) | Available | ||||
| Long Loan | MAIN LIBRARY | TK7800-8360 (Browse shelf) | Available |
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| RD592.5-596 Early Brain Injury or Cerebral Vasospasm | RC261-271 Melanoma Development | TK7800-8360 Strain-Induced Effects in Advanced MOSFETs | TK7874-7874.9 Strain-Induced Effects in Advanced MOSFETs | TJ1-1570 New Trends in Vibration Based Structural Health Monitoring | TA349-359 Asymptotic Methods in Fluid Mechanics: Survey and Recent Advances | TK5105.5-5105.9 Service Engineering |
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given
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