Strain Effect in Semiconductors [electronic resource] :Theory and Device Applications / by Yongke Sun, Scott E. Thompson, Toshikazu Nishida.
by Sun, Yongke [author.]; Thompson, Scott E [author.]; Nishida, Toshikazu [author.]; SpringerLink (Online service).
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Item type | Current location | Call number | Status | Date due | Barcode |
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TK7874-7874.9 (Browse shelf) | Available | ||||
Long Loan | MAIN LIBRARY | TK7800-8360 (Browse shelf) | Available |
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QR180-189.5 Bioinformatics for Immunomics | QA21-27 Cauchy’s Cours d’analyse | TK7800-8360 Strain Effect in Semiconductors | TK7874-7874.9 Strain Effect in Semiconductors | TA157-158.3 Engineering Education Quality Assurance | Toward Equity in Quality in Mathematics Education | LC8-6691 Modeling Students' Mathematical Modeling Competencies |
Overview: The Age of Strained Devices -- Band Structures of Strained Semiconductors -- Stress, Strain, Piezoresistivity, and Piezoelectricity -- Strain and Semiconductor Crystal Symmetry -- Band Structures of Strained Semiconductors -- Low-Dimensional Semiconductor Structures -- Transport Theory of Strained Semiconductors -- Semiconductor Transport -- Strain in Semiconductor Devices -- Strain in Electron Devices -- Piezoresistive Strain Sensors -- Strain Effects on Optoelectronic Devices.
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. The book discusses relevant applications of strain while also focusing on the fundamental physics as they pertain to bulk, planar, and scaled nano-devices. Lead authors Yongke Sun, Scott Thompson and Toshikazu Nishida also: Treat strain physics at both the qualitative overview level as well as provide detailed fundamentals Explain strain physics relevant to logic devices as well as strain-based MEMS This book is relevant to current strained Si logic technology, as well as for understanding the physics and scaling of future strain nano-scale devices. It is perfect for practicing device engineers at semiconductor manufacturers, as well as graduate students studying device physics at universities.
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